2SB992 NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB992

DESCRIPTION

  • Collector-Emitter Breakdown Voltage- : V(BR)CEo= -SOV(Min)
  • Collector Power Dissipation- : Pc= 40W@ Tc= 25'C
  • Low Collector Saturation Voltage- : VCE(sa.)= -0.5V(Max)@ lc= -4A
  • Complement to Type 2SD1362

APPLICATIONS

  • High current switching applications.
  • Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25t:) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @Ta=25°C Collector Power Dissipation @Tc=25t: Junction Temperature Storage Temperature VALUE -100 -80 1.5 150 -55-150 UNIT V V V A A W , ,-..,, 2 PIH: 1 Base 1 . '. 2 Collector

3 Knitter

i! " TO-220C package '1? A T » » H • j,| K T f C A fs~\\ *IU D rv* DIN A B C D F H J K L Q R S u V mm WIN 15.50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13. 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \\\\ithout notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time of going to press, lltmever, N.I Semi-Condiietors assumes no responsibility for any errors or omissions discovered in its use. N.I Seiill-Conduclois encourages customers to verify that datasheets are cimvnl before placiim orders. Quality Semi-Conducfors

Silicon PNP Power Transistor 2SB992

ELECTRICAL CHARACTERISTICS

Tj=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) Vee(sai) ICBO IEBO hpE-1 hFE-2 COB fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -30mA; IB= 0 lc= -4A; IB= -0.4A |c= -4A; IB= -0.4A VCB=-100V; IE=0 VEB= -5V; lc= 0 lc= -1A; VCE= -1V lc= -4A; VCE= -1V lE=0;VCB=-10V;f,esr 1MHz lc= -1A; VCE= -4V MIN -80 TYP. 250 MAX -0.5 -1.4 240 UNIT V V V u A U A PF MHz Switching Times ton tstg tf Turn-on Time Storage Time Fall Time Vcc- -30V, RL=10n, IB1= -lB2= -0.3A, 0.4 2.5 0.5 u s M s U s

  • hpE-1 Classifications 70-140 Y 120-240