2SB975 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
^s.mi-Condu.cto'i iJ^ioctucfa, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB975
DESCRIPTION
- High DC Current Gain- : hFE = 2000(Min)@ lc= -3A
- Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ lc= -3A
- Complement to Type 2SD1309
APPLICATIONS
- Designed for audio frequency power amplifier and low-speed switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25°C) SYMBOL VCBO VCEO VEBO Ic I CM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-DC Collector Power Dissipation TC=25°C Collector Power Dissipation Ta=25"C Junction Temperature Storage Temperature Range VALUE -150 -100 -12 -0.8 1.5 150 -55-150 UNIT V V V A A A W p 1 > ' ' -' T Tz p- ^M7 IB: 1 Base
2 Collector
3 Emitter
j M.Q. A ' -« B • :r0c
- •;•• I" ' ^ ' K T 1 Iv G (* c r DIM A B C D F G H J K L Q R S U tf I -Ji mm MiN 9.90 0.70 4.98 2.70 6.45 8.66 MAX ,15.90 10.20 4,50 0.90 3,70 5.18 2.90 0,60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 N.I Senii-Cnnduetors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time of going N.I Senii-C'ondiietors encourages customers to \\erity that datasheets are cunvnl before placing orders. Quality Semi-Conductors
Silicon PNP Darlington Power Transistor 2SB975
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcE(sat) VeE(sat) ICBO IEBO hpE-1 hpE-2 PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc= -3A, IB= -3mA lc= -3A, IB= -3mA VCB=-100V, IE=0 VEB= -7V; lc= 0 lc= -3A; VCE= -2V lc= -5A; VCE= -2V MIN 2000 500 TYP, MAX -1.5 -2.0 -1.0 15000 UNIT V V MA mA Switching times ton tstg tf Turn-on Time Storage Time Fall Time RL=16.7n,Vcc« -50V lc= -3A; IB1= -lB2= -3mA 0.5 1.0 1.0 u s u s M s hpE-1 Classifications M 2000-5000 L 3000-7000 K 5000-15000