2SB975 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB975
DESCRIPTION
- With TO-220 package
- DARLINGTON
- High DC current gain
- Low collector saturation voltage
APPLICATIONS
- Low frequency power amplification
- Low speed power switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -8 A TC=25 40 PC Collector power dissipation Ta=25 1.5 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB975 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=-30mA ;IB=0 -100 V V(BR)CBO Collector-base breakdown voltage I C=-1mA ;IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage I E=-5mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage I C=-3A; IB=-3mA -1.5 V VBEsat Base-emitter saturation voltage I C=-3A; IB=-3mA -2.0 V ICBO Collector cut-off current V CB=-100V; IE=0 -1 µA ICEO Collector cut-off current V CE=-50V; IB=0 -100 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -5.0 mA hFE DC current gain I C=-3A ; VCE=-2V 2000 15000
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB975 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)