2SB975 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB975
DESCRIPTION
- High DC Current Gain- : hFE = 2000(Min)@ IC= -3A
- Low Collector-Emitter Saturation Voltage- : V CE(sat) = -1.5V(Max)@ IC= -3A
- Complement to Type 2SD1309
APPLICATIONS
- Designed for audio frequency power amplifier and low-speed switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -12 A IB B Base Current-DC -0.8 A Collector Power Dissipation TC=25℃ 40 PC Collector Power Dissipation Ta=25℃ 1.5 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB975
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -3A, IB= -3mA B -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A, IB= -3mA B -2.0 V ICBO Collector Cutoff Current VCB= -100V, IE= 0 -1.0 μA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -5 mA hFE-1 DC Current Gain IC= -3A; VCE= -2V 2000 15000 hFE-2 DC Current Gain IC= -5A; VCE= -2V 500 Switching times ton Turn-on Time 0.5 μs tstg Storage Time 1.0 μs tf Fall Time RL= 16.7Ω, VCC≈ -50V IC= -3A; IB1= -IB2= -3mA 1.0 μs hFE-1 Classifications M L K 2000-5000 3000-7000 5000-15000 isc Website：www.iscsemi.cn