2SB974 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB974
DESCRIPTION
- High DC Current Gain- : hFE = 2000(Min)@ lc= -2A
- Low Collector-Emitter Saturation Voltage- : VCE(sao = -1.5V(Max)@ IC=-2A
- Complement to Type 2SD1308
APPLICATIONS
- Designed for audio frequency power amplifier and low-speed switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25°C) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-DC Collector Power Dissipation Tc~25°C Collector Power Dissipation Ta=25'C Junction Temperature Storage Temperature Range VALUE -100 -100 -10 -0.5 1.5 150 -55-150 UNIT V V V A A A W r 2 • - TO rt_J — K-51 "' *M7 [H: 1 Base
2 Collector
3 Emitter
-2ZOC package I I JL ,. B •- - V-H !/7j*f <t-
1 H 'T
K c~l T f if DIN A B C D F G H i K L U R S U V ,,-F * L D mm mu 15,50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13. 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10,20 4,50 0.90 3,70 5.18 2.90 0 60 13.40 1.45 2.90 2.70 1.35 6.65 8.86
- -S
- » « J \\. w f '*|™ I ^jg/ NJ Semi-Conductors reserves the right to change test conditions, parameter limits am package dimensions \\\\ithout \\\\/ notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going \\r '° PR'SS- ' li'\\\\ever, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. \\ Wr N.I Semi-Conductors encourages customers to verily thai datasheets are current bclbv placing orde Js. Quality Semi-Conductors
Silicon PNP Darlington Power Transistor 2SB974
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VcE(sat) VeE(sat) ICBO IEBO hpE-1 hpE-2 PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc= -2A, IB= -2mA lc= -2A, IB= -2mA Vce=-100V, IE=0 VEB= -7V; lc= 0 lc= -2A; VCE= -2V lo= -4A; VCE= -2V ' MIN 2000 500 TYP. MAX -1.5 -2.0 -1.0 20000 UNIT V V uA mA Switching times ton tstg tf Turn-on Time Storage Time Fall Time RL=250,VCC« -50V lc= -2A; IB1= -\\B2= -2mA 0.5 1.0 1.0 M s M s M S hpE-1 Classifications M 2000-5000 L 4000-10000 K 8000-20000