2SB970-HF_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors ■ Features

  • Low collector to emitter saturation voltage VCE(sat).
  • For low-voltage output amplification 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -10 Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -500 mA Collector Current - Pulse ICP -1 A Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -15 V Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -10 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -7 Collector-base cut-off current ICBO VCB= - 10V , IE=0 -0.1 uA Emitter cut-off current IEBO VEB= -6V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-400 mA, IB=-8mA -0.16 -0.3 V Base - emitter saturation voltage VBE(sat) IC=-400 mA, IB=-8mA -0.8 -1.2 VCE= -2V, IC= -500mA 130 350 VCE= -2V, IC= -1A 60 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 22 pF Transition frequency fT VCE= -10V, IE= 50mA，f=200MHz 130 MHz hFE DC current gain ■ Classification of hfe(1) Type 2SB970-R-HF 2SB970-S-HF Range 130-220 180-350 Marking 1RR F 1RS F
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish PNP Transistors 2SB970-HF

www.kexin.com.cn2 Transistors ■ Typical Characterisitics 0610 40 12080 14020 10060 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW) –1.2 –1.0 – 0.8 – 0.6 – 0.4 – 0.2 Ta=25˚C –9mA –8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA IB=–10mA Collector to emitter voltage VCE (V) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC/IB=50 Ta=–25˚C25˚C 75˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC/IB=50 Ta=75˚C 25˚C –25˚C 600 500 400 300 200 100 VCE=–2V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 1 3 10 30 100 200 160 120 180 140 100 VCB=–10V Ta=25˚C Emitter current IE (mA) Transition frequency fT (MHz) IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) PC IaT — C — VCE VBE(sat) — I C VCE(sat) — I C hFE — I C fT — I E Cob — VCB PNP Transistors 2SB970-HF