2SB962-Z_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
www.kexin.com.cn 1 Tran sistors PNP Transistors 2SB962-Z ■ Features
- Low collector to emitter saturation voltage VCE(sat). 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm
1 Base
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -30 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -3 Collector current -Pulse ICP -6 Collector Power Dissipation (Note.1) PC 2 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A Note.1: PW ≤ 10ms,Duty Cycle ≤ 50℅ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -40 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -30 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -30V , IE=0 -10 Emitter cut-off current IEBO VEB= -4V , IC=0 -1 Collector-emitter saturation voltage VCE(sat) IC=-2 A, IB=-200mA (Note.1) -0.3 -0.5 Base - emitter saturation voltage VBE(sat) IC=-2 A, IB=-200mA (Note.1) -1 -2 hFE(1) VCE= -2V, IC= -20mA (Note.1) 30 150 hFE(2) VCE= -2V, IC= -1 A (Note.1) 60 160 400 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 55 pF Transition frequency fT VCE= -5V, IE= 100mA 80 MHz DC current gain V uA V Note.1: Pulsed: PW ≤ 350us,Duty Cycle≤ 2℅ ■ Classification of hfe(2) Type 2SB962-Z-R 2SB962-Z-Q 2SB962-Z-P 2SB962-Z-E Range 60-120 100-200 160-320 200-400
www.kexin.com.cn2 Transistors PNP Transistors 2SB962-Z ■ Typical Characterisitics
www.kexin.com.cn 3 Tran sistors PNP Transistors 2SB962-Z ■ Typical Characterisitics