2SB950A NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistor 2SB950A

DESCRIPTION

  • High DC Current Gain- : hFE= 2000(Min.)@lc= -3A
  • High Speed Switching
  • Complement to Type 2SD1276A

APPLICATIONS

  • Designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Ta=25'C Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -80 -80 150 -55-150 UNIT V V V A A W r i ^3~

1 Base

2 Collector

3 Knitter

  • G «- T • A ; j i> H V DIM A B C D F G H J K L N Q R S U V rf ^*-v
  • — j mm MIN 16.85 9.54 4.35 0.75 3.20 6.90 5.15 0,45 13.35 1.10 4.98 4.35 2.55 2.70 1.75 1.30 MAX 17.15 10.10 4.65 0.90 3.40 7.20 5.45 0.75 13.65 1.30 5.18 5.15 3.25 2.90 2.05 1.50 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \\\\ithout notice. Information furnished by N.I Semi-l'oniluetors is believed to be both accurate and reliable at the time of going to press, llouevcr. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verily that datasheets are current before placing orders. Quality Semi-Conductors

Silicon PNP Darlington Power Transistor 2SB950A

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise specified SYMBOL V(BR)CEO VcE(sat)-1 VcE(sat)-2 VeE(on) ICBO ICEO IEBO hpE-1 hfE-2 fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -30mA ; IB= 0 lc=-3A;lB=-12mA lc= -5A; IB= -20mA lc= -3A ; VCE= -3V VCB=-100V; IE=0 VCE= -40V ; IB= 0 VEB= -5V ; lc= 0 lc= -0.5A ;VCE= -3V lc= -3A ; VCE= -3V IC=-0.5A;VCE= -10V;ftesr1MHz MIN -80 1000 2000 TYP. MAX -2.0 -4.0 -2.5 -0.2 -0.5 -2.0 10000 UNIT V V V V mA mA mA MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC=-3A, IB1= -lB2= -12mA, Vcc= -50V 0.3 2.0 0.5 u s u s u s

  • hpE-2 Classifications Q 2000-5000 P 4000-10000