2SB950A ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB950A
DESCRIPTION
- High DC Current Gain- : h FE= 2000(Min.)@IC= -3A
- High Speed Switching
- Complement to Type 2SD1276A
APPLICATIONS
- Designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A Collector Power Dissipation @ Ta=25℃ 2 PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB950A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 -80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA B -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA B -4.0 V VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -3V -2.5 V ICBO Collector Cutoff Current VCB= -100V ; IE= 0 -0.2 mA ICEO Collector Cutoff Current VCE= -40V ; IB= 0 B -0.5 mA IEBO Emitter Cutoff Current VEB= -5V ; IC= 0 -2.0 mA hFE-1 DC Current Gain IC= -0.5A ;VCE= -3V 1000 hFE-2 DC Current Gain IC= -3A ; VCE= -3V 2000 10000 fT Current-Gain—Bandwidth Product IC=-0.5A;VCE= -10V;ftest=1MHz 20 MHz Switching times ton Turn-on Time 0.3 μs tstg Storage Time 2.0 μs tf Fall Time IC= -3A,IB1= -IB2= -12mA, VCC= -50V 0.5 μs hFE-2 Classifications Q P 2000-5000 4000-10000 isc Website：www.iscsemi.cn 2