2SB934 PANASONIC
Document overview
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Technical content
Silicon PNP epitaxial planar type For power switching Complementary to 2SD1257 n Features l Low collector to emitter saturation voltage VCE(sat) l Satisfactory linearity of foward current transfer ratio hFE l Large collector current IC l N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –130 –80 –15 1.3 150 –55 to +150 Unit V V V A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE1 hFE2 * V CE(sat) V BE(sat) fT ton tstg tf Conditions V CB = –100V , IE = 0 V EB = –5V , IC = 0 IC = –10mA, IB = 0 V CE = –2V , IC = – 0.1A V CE = –2V , IC = –3A IC = –5A, IB = – 0.25A IC = –5A, IB = – 0.25A V CE = –10V , IC = – 0.5A, f = 10MHz IC = –3A, IB1 = – 0.3A, IB2 = 0.3A min –80 typ 0.5 1.5 0.1 max –10 –50 260 – 0.5 –1.5 Unit mA mA V V V MHz ms ms ms *hFE2 Rank classification Rank Q P hFE2 90 to 180 130 to 260 TC =25°C Ta=25°C Unit: mm 1:Base 2:Collector 3:Emitter N Type Package 8.5–0.2 6.0–0.5 10.0–0.310.5min. 2.0 1.5–0.1 1.5max. 0.8–0.1 5.08–0.5 2.54–0.3 1.1max. 0.5max. 1.0–0.1 3.4–0.3 213 Unit: mm 8.5–0.2 4.4–0.5 2.0 10.0–0.3 14.7–0.5 4.4–0.5 6.0–0.3 3.4–0.3 2.54–0.3 5.08–0.5 1.0–0.1 0.8–0.1 1.5 –0.4 3.0 +0.4 –0.2 0 to 0.4 1.1 max. R0.5 R0.5 123 1:Base 2:Collector 3:Emitter N Type Package (DS)
PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C C ob —I C ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 50 · 50 · 2mm Al heat sink (3) Without heat sink (PC =1.3W)(1) (3) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –2.0 –1.6 –1.2 – 0.8 – 0.4 TC =25˚C IB=–120mA –110mA –100mA –80mA –90mA –70mA –60mA –40mA –30mA –20mA –10mA Collector to emitter voltage VCE (V) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=20 25˚C TC =100˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=20 TC =–25˚C 25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 100 300 1000 3000 10000 VCE =–2V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 100 300 1000 3000 10000 VCE =–10V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 100 300 1000 3000 10000 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0– 8 –2 –6 –4 0.01 0.03 0.1 0.3 100 tstg ton tf Pulsed tw =1ms Duty cycle=1% I C /IB=10 (–IB1=IB2) VCC =–50V TC =25˚C Collector current IC (A) Switching time ton,tstg,tf (ms) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 Non repetitive pulse TC =25˚C 10ms t=0.5ms 1ms ICP IC 300ms Collector to emitter voltage VCE (V) Collector current IC (A)
R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 10–2 10–1 103 102 (1) (2) (1) Without heat sink (2) With a 50 · 50 · 2mm Al heat sink Time t (s) Thermal resistance Rth(t) (˚C/W)