2SB932_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SB932 ■ Features

  • Low collector to emitter saturation voltage VCE(sat)
  • Satisfactory linearity of foward current transfer ratio hFE
  • Large collector current IC
  • Complementary to 2SD1255 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -130 Collector - Emitter Voltage VCEO -80 Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -4 Collector current - Pulse ICP -8 Collector Power Dissipation Tc = 25°C 35 Ta = 25°C 1.3 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A PC W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -130 Collector- emitter breakdown voltage VCEO Ic= -10 mA， IB=0 -80 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -7 Collector-base cut-off current ICBO VCB= -100V , IE=0 -10 Emitter cut-off current IEBO VEB= -5V , IC=0 -50 Collector-emitter saturation voltage VCE(sat) IC=-3 A, IB=-150mA -0.5 Base - emitter saturation voltage VBE(sat) IC=-3 A, IB=-150mA -1.5 hFE(1) VCE= -2V, IC= -100mA 45 hFE(2) VCE= -2V, IC= -1 A 90 260 Turn-on time ton 0.15 Storage time tstg 0.8 Fall time tf 0.15 Transition frequency fT VCE= -10V, IC= -500mA,f=10MHz 30 MHz IC = – 1A, IB1 = –100mA, IB2 = 100mA us DC current gain V uA V ■ Classification of hfe(2) Type 2SB932-Q 2SB932-P Range 90-180 130-260

www.kexin.com.cn2 Transistors PNP Transistors 2SB932 ■ Typical Characterisitics PC IaT— C — VCE VCE(sat) — IC VBE(sat) — IC hFE — IC fT — IC Cob — VCB ton, tstg, tf — I C Area of safe operation (ASO) 0610 40 12080 14020 10060 (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) (1) (2) (3) Ambient temperature Ta (˚C) Collector power dissipation PC (W) TC=25˚C –80mA –90mA –60mA –70mA –40mA –50mA –30mA –20mA –8mA –5mA IB=–100mA Collector to emitter voltage VCE (V) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC/IB=20 25˚C TC=100˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC/IB=20 TC=–25˚C 25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 100 300 1000 3000 10000 VCE=–2V TC=100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 100 300 1000 3000 10000 VCE=–10V f=10MHz TC=25˚C Collector current IC (A) Transition frequency fT (MHz) 100 300 1000 3000 10000 IE=0 f=1MHz TC=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.01 0.03 0.1 0.3 100 tstg ton tf Pulsed tw=1ms Duty cycle=1% IC/IB=30 (–IB1=IB2) VCC=–50V TC=25˚C Collector current IC (A) Switching time ton,tstg,tf (µs) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 Non repetitive pulse TC=25˚C 10ms t=0.5ms 1ms DC ICP IC Collector to emitter voltage VCE (V) Collector current IC (A)

www.kexin.com.cn 3 Tran sistors PNP Transistors 2SB932 ■ Typical Characterisitics Rth(t) — t 10–4 1010–3 10–110–2 011 3102 104 10–2 10–1 103 102 (1) (2) (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink Time t (s) Thermal resistance Rth(t) (˚C/W)