2SB930A_15 KEXIN
Document overview
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Technical content
www.kexin.com.cn 1 Transistors PNP Transistors 2SB930A ■ Features
- High forward current transfer ratio hFE which has satisfactory linearity
- Low collector to emitter saturation voltage VCE(sat)
- Complementary to 2SD1253A 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm
1 Base
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rati g Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -4 Collector current - Pulse ICP -8 Collector Power Dissipation Tc = 25°C 40 Ta = 25°C 1.3 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A PC W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -80 Collector- emitter breakdown voltage VCEO Ic= -30 mA， IB=0 -80 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -80V , IE=0 -0.1 mA Collector cutoff current ICES VCE= -80V ,VBE=0 -400 Collector cutoff current ICEO VCE= -60V ,IB=0 -700 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 mA Collector-emitter saturation voltage VCE(sat) IC=-4 A, IB=-400mA -1.5 Base - emitter saturation voltage VBE(sat) IC=-4 A, IB=-400mA -1.2 Base - emitter voltage VBE VCE= -4 V, IC= -3 A - 2 hFE(1) VCE= -4 V, IC= -1 A 70 250 hFE(2) VCE= -4 V, IC= -3 A 15 Turn-on time ton 0.2 Storage time tstg 0.5 Fall time tf 0.2 Transition frequency fT VCE= -10V, IC= -100mA,f=1MHz 20 MHz IC = –4A, IB1 = – 0.4A, IB2 = 0.4A us DC current gain V V uA ■ Classification of hfe(1) Type 2SB930A-Q 2SB930A-P Range 70-150 120-250
www.kexin.com.cn2 Transistors PNP Transistors 2SB930A ■ Typical Characterisitics PC IaT— C — VCE IC — VBE VCE(sat) — IC hFE — IC fT — IC R)OSA( noitarepo efas fo aerA th(t) — t 0610 40 12080 14020 10060 (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W)(1) (3) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W) TC=25˚C –100mA –80mA –60mA –40mA –20mA –10mA –8mA –5mA IB=–120mA Collector to emitter voltage VCE (V) Collector current IC (A) –10 TC=100˚C –25˚C 25˚C VCE=–4V Base to emitter voltage VBE (V) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC/IB=10 25˚C TC=100˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 100 300 1000 3000 10000 VCE=–4V TC=100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 100 300 1000 3000 10000 VCE=–5V f=1MHz TC=25˚C Collector current IC (A) Transition frequency fT (MHz) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 Non repetitive pulse TC=25˚C 10ms t=1ms ICP IC 300ms Collector to emitter voltage VCE (V) Collector current IC (A) 10–4 1010–3 10–110–2 011 3102 104 10–2 10–1 103 102 (1) (2) (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink Time t (s) Thermal resistance Rth(t) (˚C/W)