2SB923 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
E.IIE.U , U na. 20 STERH AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB923 ucovsmr i ivjra
- High Collector Current:: lc= -20A
- Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@lc= -10A
- Complement to Type 2SD1239
APPLICATIONS
- Designed for large current switching of relay drivers, high- speed inverters, converters applications. ABSOLUTE MAXIMUM RATINGS(Ta=25-C) SYMBOL VCBO VCEO VEBO Ic PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Total Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -120 -80 -20 100 150 -55-150 UNIT V V V A W 3 PIN l.Base J 2. Emitter 1 [ 3.Collestor(case) ] TO-3 Package t ' ' ' C I —JU-D 3PL j- L-* /" ^Tm"~^ c vv^^X J H3H nun MM MIN MAX A 39 JOO B 25.30 28.67 C 7.80 8,50 D 0.90 1.10 E t .40 1 .60 <i 10.92 H 546 J< 1110 13. SID 1 1675 1705 N 19.40 19 62 0 4.00 4"20~' U ^JJQ 30 20 V 4,2L 4J5 GH . t i B NJ Seiui-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished hy N.I Senii-Conductors is believed to he hoth accurate and reliable at the time ot'gning to press. I lo\\\\ever. N.l Seini-Condnctors assumes no responsibility lor any errors or omission discovered in its use." N.I Senii-t'ondiietors eneoura»es ensloiners to verily that datasheets are current before placing orders. Qualiry 5emi-Conductors
Silicon PNP Power Transistor 2SB923
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) ICBO IEBO riFE-1 hFE-2 ft PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS lc=-1mA; RBE= °° lc=-1mA;l6=0 lE=-1mA;lc=0 IC=-10A;-IB=-1A VCB= -80V; IE= 0 VEB= -4V; lc= 0 lc= -1A; VCE= -2V lc=-10A;VCE=-2V lc= -1A; VCE= -2V MIN -80 -120 TYP. MAX -0.5 -0.1 -0.1 280 UNIT V V V V mA mA MHz hpE-1 Classifications Q 70-140 R 100-200 S 140-280