2SB923 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SB923
DESCRIPTION
- High Collector Current:: IC= -20A
- Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -10A
- Complement to Type 2SD1239
APPLICATIONS
- Designed for large current switching of relay drivers, high- speed inverters, converters applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -20 A PC Total Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB923
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -0.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -1A; VCE= -2V 70 280 hFE-2 DC Current Gain IC= -10A; VCE= -2V 30 fT Current-Gain—Bandwidth Product IC= -1A; VCE= -2V 20 MHz hFE-1 Classifications Q R S 70-140 100-200 140-280