2SB922 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
'IziiEU J$£.rni~CondiLctoi LPioaucti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB922
DESCRIPTION
- High Collector Current:: lc= -12A
- Low Collector Saturation Voltage : VCE(sa.r -0.5V(Max)@lc= -6A
- Complement to Type 2SD1238
APPLICATIONS
- Designed for large current switching of relay drivers, high- speed inverters, converters applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -120 -80 -12 -20 150 -55-150 UNIT V V V A A W 1 2 3 -». C • ->~Vi t V H " ' t K DIM A B C D E F G H J K L N Q R S U Y mm MIN 19.60 15.50 4.70 0.90 1.90 3.40 2,90 3,20 0.595 19.80 1.90 10.89 4.90 3,35 1,995 5.90 9.90 MAX 20.30 15.70 4.90 1.10 2.10 3.60 3,20 3,40 0,605 20,70 2.20 10.91 5.10 3.45 2,100 6.20 10.10 N.I Semi-Conductors reserves the right to change tost conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of uoi lo press. I hmever. N.I Semi-Conductors assumes no responsibililv for any errors or omissions discovered in its use N.I Semi-Conductors encourages customers to verily that datasheets are cimvnt before placinj; orders. Quality 5emi-Conductors
Silicon PNP Power Transistor 2SB922
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) ICBO IEBO hpE-1 hFE-2 fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -1mA; RBE= °° lc=-1mA; IE=0 lE=-1mA; lc=0 lo= -6A; IB= -0.6A VCB= -80V; IE= 0 VEB= -4V; lc= 0 lc=-1A;VCE=-2V lc= -6A; VCE= -2V lc= -1A; VCE= -5V MIN -80 -120 TYP. MAX -0.5 -0.1 -0.1 280 UNIT V V V V mA mA MHz hpe-1 Classifications Q 70-140 R 100-200 S 140-280