2SB922 SAVANTIC

Document overview

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  • PDF pages: 3

Technical content

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB922

DESCRIPTION

  • With TO-3PN package
  • Complement to type 2SD1238
  • Wide area of safe operation
  • Low collector saturation voltage : VCE(sat) =–0.5V max.

APPLICATIONS

  • Suitable for relay drivers,high-speed Inverters, converters,and other large- current switching applications PINNING PIN DESCRIPTION

1 Base

2 Collector;connected to

3 Emitter

Absolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -12 A ICM Collector current (Pulse) -20 A PC Collector power dissipation T C=25 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3PN) and symbol

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB922 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=> -120 V V(BR)CBO Collector-base breakdown voltage I C=-1mA ;IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage I E=-1mA ;IC=0 -6 V VCEsat Collector-emitter saturation voltage I C=-6A ,IB=-0.6A -0.5 V ICBO Collector cut-off current V CB=-80V, IE=0 -0.1 mA IEBO Emitter cut-off current V EB=-4V; IC=0 -0.1 mA hFE-1 DC current gain I C=-1A ; VCE=-2V 70 280 hFE-2 DC current gain I C=-6A ; VCE=-2V 30 fT Transition frequency I C=-1A ; VCE=-5V 20 MHz Switching times ton Turn-on time 0.2 µs tstg Storage time 0.7 µs tf Fall time IC=-5.0A; IB1=-IB2=-0.5A VCC=50V;RL=10F 0.1 µs hFE-1 Classifications Q R S 70-140 100-200 140-280

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB922 PACKAGE OUTLINE Fig.2 outline dimensions