2SB922

2SB922 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• Low collector-to-emitter saturation voltage : V CE (sat)=- -0.5V (PNP), 0.4V (NPN) max.
• Wide ASO and highly resistant to breakdown. Specifications ( ) : 2SB922 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -)120 V Collector-to-Emitter Voltage V CEO (- -)80 V Emitter-to-Base Voltage V EBO (- -)6 V Collector Current I C (- -)12 A Collector Current (Pulse) I CP (- -)20 A Collector Dissipation P C Tc=25°C8 0 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =(- -)80V, IE=0 (- -)0.1 mA Emitter Cutoff Current I EBO VEB =(- -)4V, IC =0 (- -)0.1 mA Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SB922 / 2SD1238 Large Current Switching Applications Package Dimensions unit : mm 2022A [2SB922 / 2SD1238]

92502 TS IM 8-4747

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. PNP / NPN Epitaxial Planar Silicon Transistors 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB 15.6 2.6 3.51.2 14.0 1.6 1.0 2.0 0.6 20.0 20.0 15.0 1.3 3.2 4.8 2.0 0.6 5.455.45 1.4 1 2 3

No.1429-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit DC Current Gain hFE 1V CE =(- -)2V, IC =(- -)1A 70* 280* hFE 2V CE =(- -)2V, IC =(- -)6A 30 Gain-Bandwidth Product f T VCE =(- -)5V, IC =(- -)1A 20 MHz Collector-to-Emitter Saturation Voltage VCE (sat) I C =(- -)6A, IB=(- -)0.6A (- -0.5)0.4 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =(- -)1mA, IE=0 (- -)120 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =(- -)1mA, RBE =∞ (- -)80 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)1mA, IC =0 (- -)6 V Turn-ON Time t on See specified test circuit. 0.2 µs Storage Time t stg See specified test circuit. (0.7)1.7 µs Fall Time t f See specified test circuit. (0.1)0.2 µs *The 2SB922 / 2SD1238 are graded as follows by hFE at 1A : Rank Q R S hFE 70 to 140 100 to 200 140 to 280 Swicthing Time Test Circuit --2 --4 --6 --8 --10 --12 --14 IC -- VCE IT04448 2SB922 IB =0 IC -- VCE IT04449 2SD1238 IB =0 --40mA --20mA --500mA --1A --80mA --100mA --200mA 100mA 200mA 20mA 40mA 80mA 500mA IC -- VBE --2 --4 --6 --8 --10 --14 --12 IT04450 2SB922 V CE = --2V IC -- VBE IT04451 2SD1238 V CE =2V Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A VR R B VCC =50VVBE = --5V + + 50Ω INPUT OUTPUT R L=10Ω 100µF 470 µF PW=20 µs IB1 D.C.≤1% IB2 IC =10IB1 = --10IB2 =5A For PNP, the polarity is reversed.

No.1429-3/4 3 --0.1753 27 53 27 5--1.0 --10 32 100 1000 3 0.1753 27 53 27 51.0 10 32 100 1000 hFE -- IC IT04452 hFE -- IC IT04453 2SD1238 V CE =2V 2SB922 V CE = --2V IT04458 0 100 20 60 40 80 120 140 160 100 2SB922 / 2SD1238 PC -- Tc 3 --1.057 --10 23 --1005723 5 7 3 1.057 10 23 1005723 5 7 A S O --0.1 --10 --1.0 0.1 1.0 IT04456 10ms 1ms DC operation 2SB922 IC = --12A ICP = --20A 100ms A S O IT04457 10ms 1ms DC operation 2SD1238 IC =12A ICP =20A 100ms VCE (sat) -- IC IT04454 2SB922 VCE (sat) -- IC IT04455 2SD1238 3 --0.1753 2 --1.0753 27 5 --10 32 --0.01 --0.1 --10 --1.0 3 0.1753 2 1.0753 27 5 10 32 0.01 0.1 1.0 IC / IB=10 IC / IB=20 IC / IB=10IC / IB=20 DC Current Gain, hFE Collector Current, IC -- ACollector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Case Temperature, Tc -- °C Collector Dissipation, PC -- W

No.1429-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2002. Specifications and information herein are subject to change without notice. PS