2SB921 SAVANTIC
Document overview
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- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB921
DESCRIPTION
- With TO-220C package
- Complement to type 2SD1237
- Low collector saturation voltage
- Large current capacity
APPLICATIONS
- Suitable for relay drivers,high-speed inverters,converters,and other general large current switching applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -7 A ICM Collector current-Peak -12 A Ta=25 1.75 PC Collector dissipation TC=25 40 W Tj Junction temperature 150 Tstg Storage temperature -50~150 Fig.1 simplified outline (TO-220) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB921 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-1mA; RBE=; -120 V V(BR)CBO Collector-base breakdown voltage I C=-1mA; IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage I E=-1mA; IC=0 -6 V VCEsat Collector-emitter saturation voltage I C=-4A; IB=-0.4A -0.5 V ICBO Collector cut-off current V CB=-80V; IE=0 -0.1 mA IEBO Emitter cut-off current V EB=-4V; IC=0 -0.1 mA hFE-1 DC current gain I C=-1A ; VCE=-2V 70 280 hFE-2 DC current gain I C=-4A ; VCE=-2V 30 fT Transition frequency I C=-1A ; VCE=-5V 20 MHz Switching times ton Turn-on time 0.2 µs tstg Storage time 0.7 µs tf Turn-off time IC=-2A ; VCC=-50V IB1=-IB2=-0.2A;RL=1.67B 0.2 µs hFE-1Classifications Q R S 70-140 100-200 140-280
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB921 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)