2SB921 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB921
DESCRIPTION
- High Collector Current:: IC= -7A
- Low Collector Saturation Voltage : V CE(sat)= -0.5V(Max)@IC= -4A
- Complement to Type 2SD1237
APPLICATIONS
- Designed for large current switching of relay drivers, high- speed inverters, converters applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -12 A Total Power Dissipation @ TC=25℃ 40 PC Total Power Dissipation @ T a=25℃ 1.75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB921
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -0.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -1A; VCE= -2V 70 280 hFE-2 DC Current Gain IC= -4A; VCE= -2V 30 fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V 20 MHz Switching times ton Turn-on Time 0.2 μs tstg Storage Time 0.7 μs tf Fall Time RL= 1.67Ω, VCC= -50V IC= -2A; IB1= -IB2= -0.2A 0.2 μs hFE-1 Classifications Q R S 70-140 100-200 140-280 isc Website：www.iscsemi.cn 2