2SB920 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB920
DESCRIPTION
- High Collector Current:lc= -5A
- Low Collector Saturation Voltage : VcEfsatp -0.5V(Max)@lc= -3A
- Complement to Type 2SD1236
APPLICATIONS
- Designed for general purpose large current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -120 -80 150 -55~150 UNIT V V V A A W (P '^ 111 3 FIR: 1 Base ' 2 Collector
3 Emitter
' " 2 TO-2ZOC package .,i V » «
- » B H _J
- *-v-»{ IX-F M 't' * H ". "1 — I K T c~T~ i p nr DIIV A B C D F G H J K L R S U V mm WIN 15,50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10.20 4,50 0.90 3.70 5.18 2.90 0,60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 *" * J N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions nithout notice. Information furnished by N.I Semi-Conductors is believed lo be both accurate and reliable at the time of going (o press. I lo\\\\e\\er, N.I Semi-Cundtictors assumes no responsihilil> for an> errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to veril\\i datasheets are current before placing orders. Quality Serni-Conductors
Silicon PNP Power Transistor 2SB920
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) ICBO IEBO hpE-1 hFE-2 fl PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lo= -1mA; RBE= °° lc=-1mA; IE=0 lE=-1mA;lc=0 lc= -3A; IB= -0.3A VCB= -80V; IE= 0 VEB= -4V; lc= 0 lc= -1A; VCE= -2V lc= -3A; VCE= -2V lc= -1A; VCE= -5V MIN -80 -120 TYP. MAX -0.5 -0.1 -0.1 280 UNIT V V V V mA mA MHz
- hpE-1 Classifications Q 70-140 R 100-200 s 140-280