2SB906-O

2SB906_15 KEXIN

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SB906 ■ Features

• Low collector saturation voltage
• High power dissipation: PC = 20 W (Tc = 25°C)
• Complementary to 2SD1221 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -3 Base Current IB -0.5 Collector Power Dissipation Ta = 25°C 1 Tc = 25°C 20 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A PC W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -50 mA， IB=0 -60 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -7 Collector-base cut-off current ICBO VCB= -60V , IE=0 -100 Emitter cut-off current IEBO VEB= -7V , IC=0 -100 Collector-emitter saturation voltage VCE(sat) IC=-3 A, IB=-300mA -1 -1.7 Base - emitter saturation voltage VBE(sat) IC=-3 A, IB=-300mA -1.2 Base - emitter voltage VBE VCE= -5V, IC= -500mA -1 -1.5 hFE(1) VCE= -5V, IC= -500mA 60 200 hFE(2) VCE=- 5V, IC= -3A 20 Turn-on time ton 0.4 Storage time tstg 1.7 Fall time tf 0.5 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 90 pF Transition frequency fT VCE= -5V, IC= -500mA 9 MHz usSee specified Test Circuit DC current gain V nA V ■ Classification of hfe(1) Type 2SB906-O 2SB906-O Range 60-120 100-200

www.kexin.com.cn2 Transistors PNP Transistors 2SB906 −IB1 = IB2 = 0.2 A, DUTY CYCLE ≤ 1% 20 μs INPUT IB1 IB2 OUTPUT VCC = −30 V IB1 15 Ω IB2 Switching Time Test Circuit ■ Typical Characterisitics Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) Common emitter Tc = 25°C −1 −2 −3 −4 IB = −10 mA −20 −30 −40 −50 −60 −70 −80 Collector current IC (A) hFE – IC DC current gain hFE 100 300 500 1000 −0.03 −0.1 −0.3 −1 Tc = 100°C −25 Common emitter VCE = −5 V Collector current IC (A) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) −0.05 −0.3 −0.5 −0.1 Tc = 100°C −0.02 −25 Common emitter IC/IB = 10 Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) −3.0 −2.0 −1.5 −2.5

25 Tc = 100°C −25

−1.0 −0.4 −0.5 −1.0 Common emitter VCE = −5 V

www.kexin.com.cn 3 Tran sistors PNP Transistors 2SB906 ■ Typical Characterisitics Ambient temperature Ta (°C) PC – Ta Collector power dissipation PC (W) Collector-emitter voltage VCE (V) Safe Operating Area Collector current IC (A) (1) Tc = Ta infinite heat sink (2) Ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink 25 50 75 100 125 150 175 (1) (2) (3) *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −10 IC max (continuous) IC max (pulsed)* VCEO max DC operation Tc = 25°C −100−10 −1 −3 −0.1 −0.3 −0.5 −30 1 ms* 10 ms* 100 ms*