2SB904 SAVANTIC
Document overview
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB904
DESCRIPTION
- With TO-3PN package
- Complement to type 2SD1213
- Low collector saturation voltage
- Large current capacity
APPLICATIONS
- Large current switching of relay drivers, high-speed inverters,converters PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -20 A ICM Collector current-peak -30 A TC=25 60 PC Collector power dissipation Ta=25 2.5 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3PN) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB904 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=: -30 V V(BR)CBO Collector-base breakdown voltage I C=-1mA ;IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage I E=-1mA ;IC=0 -6 V VCEsat Collector-emitter saturation voltage I C=-8A; IB=-0.4A -0.25 -0.5 V ICBO Collector cut-off current V CB=-40V; IE=0 -0.1 mA IEBO Emitter cut-off current V EB=-4V; IC=0 -0.1 mA hFE-1 DC current gain I C=-1A ; VCE=-2V 70 280 hFE-2 DC current gain I C=-10A ; VCE=-2V 30 fT Transition frequency I C=-1A ; VCE=-5V 120 MHz Switching times ton Turn-on time 0.3 µs tstg Storage time 0.3 µs tf Fall time IC=-10A ;IB1=-IB2=-0.5A VCC=-10V;RL=1C 0.02 µs hFE-1 Classifications Q R S 70-140 100-200 140-280
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB904 PACKAGE OUTLINE Fig.2 outline dimensions