2SB904

2SB904 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 3

Technical content

Features

+ Low collector-to-emitter saturation voltage! VCE(sat)=—0.5V(PNP), 0.4(NPN) max. + Large current capacity ( ):28B904 Absolute Maximum Ratings/T=25°C unit Collector-to-Base Voltage VcBo {-)60 v Collector-to-Emitter Voltage VCEO {-)30 v Emitter-to-Base Voltage VEBO {(-)6 Vv Collector Current tc {-)20 A Collector Current (Pulse) Icp (-)30 A Collector Dissipation Po 2.5 W Te=25°C 60 Ww Junction Temperature Tj 150 °c Storage Temperature Tstg —55 to +150 °c Electrical Characteristics/Ta=25°C min typ) max — unit Collector Cutoff Current 'cBO Vep=(—)40V, le=0 (-)0.1 mA Emitter Cutoff Current lEBO Vep=(—)4V, Ic=0 (-)0.1 mA Common emitter DC Current Gain hr_E(1) Vce=(-)2V, Io=(-)1A 70* 280° hre(2) Voe=(-)2V, Ic=(-)10A 30 Collector to Emitter Saturation VCE (sat) Ic=(—}8A, Ip=(—)0.4A {—0.25) (-0.5) Vv Voltage 02 04 Gain Band-width Product fT VoE=(-)5V, Ic=(-)1A 120 MHz Collector-to-Base Breakdown V(BR)CBO !c=(-)1mA, lE=0 (-}60 v Voltage Collector-to-Emitter Breakdown V(BR)CEO !c=(—)1mA, RBE= (+30 Vv Voltage Emitter-to-Base Breakdown Voltage V(BR)EBO !E=(—)1mA, Ic=0 {-)6 Vv Turn-on Time ton See specified Test Circuit 300 ns Storage Time tstg " {300)600 ns Fall Time tt " 20 ns “The 2SB904/2SD 1213 are classified as follows according to hFE at 1A. 140_S 280 , Switching Time Test Circuit (For PNP, the polarity Package Dimensions 2022 ow ip: is reversed) (unit: mm) = - 20.0 INPUT bs ma Z b=— [Fh : P 7 a9 |B - cle [co [amp |} 5.0 no—| =H od ww E: Emitter 201g) =— 201g =Ic=10A 3 I — C: Collector a B: Base Unit (resistance: 9, capacitance: F) SANYO: TO3PB SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Blidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 4067KI/ 0152iKI,TSIINo, 1022-1/3

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Ce a NN 6 Lt TT TT ANAT) = CAN NAN 5! eARY ee NN NN a a 8 Ss a NN 3 3 ee aS i a AN So 71,-25°C oy © lT=25°C | { } —O4F 1ms to 100ms: Single Pulse | O41 sms to 100ms: Single Pulse ee = 10 1 10 23 Collector-to Emitter Voltage, VcE — V Collector-to-Emitter Voltage, VcE — V PC - Tc tT TTT BS 0 be IN Q 50 N 4 |S |_| S 40 no H gD ° i "| [|] P <4 gy NG 85s is sts hs te ae Case Temperature,Te - °C WE No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss, W Anyone purchasing any products described or Gontained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD, its affiliates, Subsidiaries and distributors and all their officers and employees, jointly and severally, against any ’ and all claims and litigation and ali damages, cost and expenses associated with such use: ® Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiiates, subsidiaries and distributors or any of their officers and employees jointly or severally Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ; ee No. 1022-3/3