2SB903 JMNIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
JMnic Product Specification Silicon PNP Power Transistors 2SB903
DESCRIPTION
- With TO-220 package
- Low collector saturation voltage
- Large current capacity.
- Complement to type 2SD1212
APPLICATIONS
- Suitable for relay drivers, high-speed inverters,converters, and other genral large current switching applications.
- High-speed switching applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -12 A ICM Collector current-peak -20 A 1.75 PC Collector power dissipation TC=25℃ 35 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-220) and symbol
JMnic Product Specification Silicon PNP Power Transistors 2SB903 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CBO Collector-base breakdown voltage I C=-1mA ; IE=0 -60 V V(BR)CEO Collector-emitter breakdown voltage I C=-1mA ;RBE=∞ -30 V V(BR)EBO Emitter-base breakdown voltage I E=-1mA ; IC=0 -6 V VCEsat Collector-emitter saturation voltage I C=-5A, IB=-0.25A -0.5 V ICBO Collector cut-offcurrent V CB=-40V;IE=0 -0.1 mA IEBO Emitter cut-offcurrent V EB=-4V;IC=0 -0.1 mA hFE-1 DC current gain I C=-1A ; VCE=-2V 70 280 hFE-2 DC current gain I C=-6A ; VCE=-2V 30 fT Transition frequency I C=-1A ; VCE=-5V 120 MHz Switching times ton Turn-on time 0.10 μs tstg Storage time 0.30 μs tf Fall time IC=-5A ;IB1=-IB2=-0.5A; VCC=-10V;RL=2Ω 0.03 μs hFE-1 classifications Q R S 70-140 100-200 140-280
JMnic Product Specification Silicon PNP Power Transistors 2SB903 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
JMnic Product Specification Silicon PNP Power Transistors 2SB903