2SB903 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
»_/ f O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB903
DESCRIPTION
- High Collector Current: lc= -12A
- Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@lc= -5A
- Complement to Type 2SD1212
APPLICATIONS
- Designed for relay drivers, high-speed inverters, converters, and other general large-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation @ Tc=25t: Total Power Dissipation @ Ta=25'C Junction Temperature Storage Temperature Range VALUE -60 -30 -12 -20 1.75 150 -55-150 UNIT V V V A A W r w ^ fU 3 FIH: 1 Base ! 2 Collector ^ ' 3 Emitter * " TO-220C package AJA 1 L * B H .» - V H L-F :±€rU >':'• * H ' T — | K f i c 1 PL. IV* eh DIM A B C D F G H J K L Q R S V ...» mm MtN 15.50 9.90 4.20 0.70 3.40 4.98 2 68 0.44 13.00 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10,20 4,50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1,35 6.65 8.86 --S
- •H j Rh N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \\\\ithout notice. Information furnished hy N.I Semi-Conductors is believed to he holh accurate and reliable at the time of going lo press. I lo\\\\e\\er. N.I Semi-Condiictors assumes no responsihilit\\r an> errors or omissions discovered in its use. N.I Semi-Conductor* encouraues customers to verity that datasheets are current before plaeiim orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SB903
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) ICBO IEBO hpE-t hFE-2 fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -1mA; RBE= °° lc=-1mA;lE=0 lE=-1mA; lc=0 IG= -5A; IB= -0.25A VCB= -40V; IE= 0 VEB= -4V; lc= 0 lc=-1A;VCE=-2V lc= -6A; VCE= -2V lc=-1A;VCE=-5V MIN -30 -60 TYP. 120 MAX -0.5 -0.1 -0.1 280 UNIT V V V V mA mA MHz
- hFE.i Classifications Q 70-140 R 100-200 S 140-280