2SB900 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB900 DESCRIPTION ·
- With TO-220C package
- Low collector saturation voltage
- Wide area of safe operation
APPLICATIONS
- For power amplifier and switching
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -4 A PC Collector dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ Fig.1 simplified outline (TO-220) and symbol
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB900 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -50 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V VBE Base-emitter on voltage IC=-2A ; VCE=-4V -1.4 V ICBO Collector cut-off current VCB=-50V; IE=0 -0.1 mA ICEO Collector cut-off current VCE=-50V; IE=0 -1.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-1A ; VCE=-4V 40
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB900 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)