2SB900 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB900
DESCRIPTION
- With TO-220C package
- Low collector saturation voltage
- Wide area of safe operation
APPLICATIONS
- For power amplifier and switching
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -4 A PC Collector dissipation T C=25 40 W Tj Junction temperature 150 Tstg Storage temperature -50~150 Fig.1 simplified outline (TO-220) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB900 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-1mA; IB=0 -50 V V(BR)CBO Collector-base breakdown voltage I C=-1mA; IE=0 -50 V V(BR)EBO Emitter-base breakdown voltage I E=-1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage I C=-2A; IB=-0.2A -1.0 V VBE Base-emitter on voltage I C=-2A ; VCE=-4V -1.4 V ICBO Collector cut-off current V CB=-50V; IE=0 -0.1 mA ICEO Collector cut-off current V CE=-50V; IE=0 -1.0 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -0.1 mA hFE DC current gain I C=-1A ; VCE=-4V 40
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB900 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)