2SB896 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB896 2SB896A
DESCRIPTION
- With TO-220C package
- Low collector saturation voltage
- High speed switching
APPLICATIONS
- For low voltage switching applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SB896 -40 VCBO Collector-base voltage 2SB896A Open emitter -50 V 2SB896 -20 VCEO Collector-emitter voltage 2SB896A Open base -40 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -10 A ICM Collector current-Peak -15 A PC Collector power dissipation T C=25 35 W Tj Junction temperature 150 Tstg Storage temperature -50~150
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB896 2SB896A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SB896 -20 V(BR)CEO Collector-emitter breakdown voltage 2SB896A IC=-10mA; IB=0 -40 V VCEsat Collector-emitter saturation voltage I C=-7A; IB=-0.23A -0.6 V VBEsat Base-emitter saturation voltage I C=-7A; IB=-0.23A -1.5 V 2SB896 V CB=-40V; IE=0 ICBO Collector cut-off current 2SB896A V CB=-50V; IE=0 -50 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -50 µA hFE-1 DC current gain I C=-0.1A ; VCE=-2V 45 hFE-2 DC current gain I C=-2A ; VCE=-2V 60 260 Cob Output capacitance I E=0 ; VCB=-10V;f=1MHz 200 pF fT Transition frequency I C=-0.5A ; VCE=-10V 150 MHz Switching times ton Turn-on time 0.1 µs tstg Storage time 0.5 µs tf Fall time IC=-2A ; IB1=-IB2=-66mA 0.1 µs hFE-2 Classifications R Q P 60-120 90-180 130-260
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB896 2SB896A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)