2SB891F SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB891F
DESCRIPTION
- With TO-126 package
- Complement to type 2SD1189F
- Low collector saturation voltage
APPLICATIONS
- For low frequency power amplifier
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -40 V VCEO Collector-emitter voltage Open base -32 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -2 A ICM Collector current-Peak -3 A Ta=25 1.2 PC Collector power dissipation TC=25 5 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB891F CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;IB=0 -32 V V(BR)CBO Collector-base breakdown voltage I C=-50µA ;IE=0 -40 V V(BR)EBO Emitter-base breakdown voltage I E=-50µA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage I C=-2.0A; IB=-0.2A -0.5 -0.8 V ICBO Collector cut-off current V CB=-20V; IE=0 -1.0 µA IEBO Emitter cut-off current V EB=-4V; IC=0 -1.0 µA hFE DC current gain I C=-0.5A ; VCE=-3V 82 390 fT Transition frequency I C=-0.5A ; VCE=-5V;f=30MHz 100 MHz COB Collector output capacitance I E=0; f=1MHz ; VCB=-10V 50 pF hFE-2 Classifications P Q R 82-180 120-270 180-390
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB891F PACKAGE OUTLINE Fig.2 Outline dimensions