2SB891F ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB891F DESCRIPTION ·
- With TO-126 package
- Complement to type 2SD1189F
- Low collector saturation voltage
APPLICATIONS
- For low frequency power amplifier
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -40 V VCEO Collector-emitter voltage Open base -32 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -2 A ICM Collector current-Peak -3 A Ta=25℃ 1.2 PC Collector power dissipation TC=25℃ 5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB891F CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;IB=0 B -32 V V(BR)CBO Collector-base breakdown voltage IC=-50μA ;IE=0 -40 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A -0.5 -0.8 V ICBO Collector cut-off current VCB=-20V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 μA hFE DC current gain IC=-0.5A ; VCE=-3V 82 390 fT Transition frequency IC=-0.5A ; VCE=-5V;f=30MHz 100 MHz COB Collector output capacitance IE=0; f=1MHz ; VCB=-10V 50 pF hFE-2 Classifications P Q R 82-180 120-270 180-390
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB891F PACKAGE OUTLINE F i g . 2 O u t l i n e d i m e n s i o n s