2SB888 SANYO
Document overview
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Technical content
Features
. High DC current gain (5000 or greater). . Large current capacity and wide ASO. . Low saturation voltage (Vog(sat)270-8V typ). Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vopo -80 v Collector to Emitter Voltage Vero ~50 v Emitter to Base Voltage Vigo -10 Vv Collector Current Ig ~0.7 A Collector Current(Pulse) Icp ~2 A Allowable Collector Dissipation Po 600 oW Junction Temperature Tj 150 vo Storage Temperature Tstg -55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Iggo Vop=~40V,1p=0 -0.1 uA Emitter Cutoff Current Ippo Vepe-8V,1¢=0 -0.1 uA DC Current Gain bpg(1) Vopt-2V,Tc=-50mA 5000 hre(2) Vogt-2V, 1¢=-500mA 3000 Gain-Bandwidth Product fr Voge-5V,1¢=-50mA 170 MHz Output Capacitance Cop Vegeta 10V, f= 1MHz 16 pF C-E Saturation Voltage Vop(sat) Ic=-100mA,Ip=-0. 1mA -0.8 -1.2 Vv B-E Saturation Voltage Vpr(sat) Ic=-100mA,Ip=~0.1mA “1,3 -2.0 OV C-B Breakdown Voltage V(BR)CBO Ige-1QA,I,=0 ~80 Vv C-E Breakdown Voltage V(BR)CEO Ip=~1mA, R, E=CO -50 Vv ~ E-B Breakdown Voltage VBR) EBO Tpe- 1024, Fo=0 =10 Vv Electrical Connection Collector Base - . Package Dimensions 2003A (unit: mm) 20 0.64 04s JEDEC: TO-92 B. Base BIAJ : SC-43 Cc. Collector SANYO: NP E, Emitter SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 4067KI/2045MW,TS No.915-1/3
' 80 —900 > nl fae ee ee ae ee ee ee | ad ar ee ee g-= Ifo a ol + | | Tl |_| HOpSSSS EEE RES ger ie Do) Pe ° cal 2 3 4 5 6 7 o -0.4 -06 -12 -16 2.0 —24 Collector to Emitter Voltage, Vop -Vv Base to Emitter Voltage, Vpp -Vv canxo hee - Ic 10 Cob - Vcp Hi rey te | PC Voor 2] iti oes PRS PL rs 2 4 LEP PN Se Peg p= a é diothito PEE - 0 af |] Jit TT 0.01 01 1.0 10 -0 Collector Current,I¢ -A Collector to Base Voltege,Vop - V go Voe(sat) - Ic > -10 Vpe(sat) - Ic ee ee ee #3 OCC 25 Coe ge iT TT TT as TPT es tit TPT Trt) ag tt et fei TT UE) eg J ee 8 10 Lie | $3. SS 2. OSS 8 e YTE Ty TP | e* {TP Tr § eee) ge a ce) AoE TTT TT yt o 0.01 01 -1.0 0.01 01 “1.0 Collector Current,Ig - A Collector Current,Ig - A 8 fr - Ic ASO Fy “Te a Ce es « obel TITER LT & Aty TT tT TTT e eo pA CTT TT ere E PSE Ne Botte TN EH BS a gs gadt TT TTT Tpit é “TTT Re CTY 3 git Titty Try 5 HE ERR | ea fa a ooo | |) Tit TNT aT) eee Collector Current,Ig - mA _ Collector to Emitter Voltage, Vop - V Sesto Sheree = BES ___Sobeetor to Baitter Vottagesop = ¥ No.915-2/3
258888 i; oO No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO. LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. W Information (including circuit diagrams and cirouit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.915-3/3 oo eT