2SB885 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • High DC current gain. - High current capacity and wide ASO. - Low saturation voltage. ( ):2SB885 Absolute Maximum Ratings at Ta =25°C . unit Collector-to-Base Voltage Vcso (—)110 v Collector-to-Emitter Voltage Vero (—)100 Vv Emitter-to-Base Voltage VeEBo (-)6 v Collector Current, Ic (-)5 A Collector Current (Pulse) Iop (-)8 A Collector Dissipation Po 1.75 Ww To=25°C 35 Ww Junction Temperature Tj 150 °C Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current IcBo. Vop=(—)80V, Ip=0 (—)0.1 mA Emitter Cutoff Current leBo Vep=(—)5V, Ic¢=0 (-)3.0 mA DC Current Gain hpg Vog=(—)8V, Io=(—)2.5A 1500 4000 Gain Bandwidth Product fp Vor=(—)5V, Ig=(—)2.54 20 MHz C-E Saturation Voltage Vextsat) I¢=(—)2.5A, Ip=(—)5mA 0.9-)15 V (-1.0) B-E Saturation Voltage Vexisat) Ic=(—)2.5A, Ip=(—)5mA (-)20 V C-B Breakdown Voltage Vesrcpo Io=(—)5mA, Ig =0 (-)110 v C-E Breakdown Voltage Vipryceo Io=(—)50mA, Rpg=oo (—)100 Vv Rise Time ton See specified Test Circuit. (0.7)0.6 Hs Storage Time tstg ” (1.3)4.8 ps Fall Time te y (1.5)1.6 US Specified Test Circuit Electrical Connection (For PNP, the polarity is reversed.) ce PW=50us, Duty CycleS1% —— 5001g1 = — 5001g2=Io=2A ° } tp Package Dimensions 2010C. ’ (unit : mm) [=] Cae 14.0 w [ — te——16.0 a wre tC 288885, oF : ae “| IT (t) SSS tA Aire ee eS rent | 8 3.6 1.2 LO8 ae 4 uy [ze o 1: Base . | Neensy Yece'Sov 2SD1195 be 2] sEDEC: To-220AB Unit (Resistance ; 2, Capacitance : F) EIA : SC-46 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 10996TS (KOTO) 8-4330/D251MH/4027KI/D152KI, TS No.927-1/4

“10 ai — Vee ° 4 lc — Vee = 2SB885 2SD1195 F ti ee a ZS lank | Qe eT t _ MELE | Ves | t+} ae ey, Zoey Zoe el B Pim Jes | lim Yn ofS ee Bi g 3 ; bf pana = |] = Ores Oe PT Collector-to-Emitter Voltage,Ver ~ V © Collector-to-Bmitter Voltage.Von ~ V k= Vv Ic = —5.0m: " —4.5mA 9002A [ogee Pe) get HEEEELE T -6 [3.5m = 6 |700uA ae Za = | z= SS

2.1 Be Tim | 2 | Yer

  1. | 3 an ie, aan es cone ree op ET tyeo lt | TT LPT TT Tee TT | Collector-to-Emitter Voltage, Vor -v Collector-to-Emitter Voltage, Von ~ V lc — Vee Ic — Vee apg See . f. 4 an HHA t ERE esey ioc i aie Lene irene Phy A Fe a Nh A An . - - =| “MM a 7 0. 08 1 16 z “ Base-to-Bmitter Voltege.Vae 4 ™ ‘ Base-to-Emitter Voltage, pp — V bre — Ic 3 here — Ic oes) oes Eee ER HH Parts HH p Dec f Rec soe BS a 3 Pa pee NI a ee a 000 1000

5 Fa i i ee ee

E q | ae ATT ET 0 | § Tro Ts CeO a lO AR “Er PEE HHH tty mo Collector CurrentyJg — A ° Collector CurrentIg— A * ‘ No.927-2/4

(sat) — Ic Te

95 Vee = a]

SD11 a : 2SB885/2: aie = 10.0) Seer setae 1 =a = = a = : = SB885 . = : VeeGat) — I iotees00 i Sinister = ttt = HH : zi SHiepcetcns i maail ty “00 fA =e. wan se | om ea == ma | im BS Hote Z. =a TT Tt | Kl) | 28 in Ta eae ie TS rr |_| Ll es [| = Se ceeerhe | Sania 7 as pt bata i+ 4 1 an a LAL 2510 Sseet cece 5 ' nea a mresiiiceee a eS 38 = = Pie 2 a ae ‘i J IA > g¢ —_ ee ag A : :

33 H eee eatiee a 2 aan = _

ae =o t+ TL i = Se — rt [I cH = : EEE — a a 3 79 == E = 3% = co 3 fereticeeat :

38 ESA tly — A ee :

/ _ — ae isfesiincaetii = ce aii 3 crease == =o anata ie i sai Fecigeti F hese I eee j rt = ' Reo Lt | es SSE EREne i ——=s $2 of - a Ce | =-40) — im $5 mensiiae ae Tas 40 metlin ij jesaae iste g eh yn +7 rrr] & =a ot ; 33 feeeeani toatl i ae ~ ag sae : = £810 =ameriae | : : 33 ==— 1.0 Io- A rane : aa ae urrent,] = =. a1 Mector Ci - : = -Oa Col aS Te=25°C <3 H as - wa tomes = Ft ;—| | . 4 i . = . = 7 _ 4 | “ets SSX = = . = XS KSI : aie <3 CJ ARCS ize! ~ 27 _ “ING, sy === = , : : es to-Emitte: : = ‘ Nector-

4 Fa :

“ Sats I8e Pet 38 +4 a 2 ; }Oms ; sing! : | re i 85/2SD1. Collecto: ee “ ian t nae 7 30; TT - 2 - 2 927-3/4 ! : No:! a - a ay | ys Bw : re ‘ature,’ Gas Temperatureste Ce

  • SSS No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss, W Anyone purchasing any products described or contained herein for an above-mentioned use shalt ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any . and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. M@ Information (including circuit diagrams and circuit parameters) herein is for example only; it is not Guarant- ,, 8ed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 1996, Specifications and infornation herein are subject to change without notice, esses No.927-4/4