2SB884 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB884
DESCRIPTION
- High DC Current Gain- : hFE= 1500(Min)@lc=-1.5A
- Wide Area of Safe Operation
- Low Collector-Emitter Saturation Voltage- : VcE(Sa»)= -1.5V(Max)@ IC=-1.5A
- Complement to Type 2SD1194
APPLICATIONS
- Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. ABSOLUTE MAXIMUM RATINGS (Ta=25"C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation TC=25'C Collector Power Dissipation Ta=25'C Junction Temperature Storage Temperature Range VALUE -110 -100 1.75 150 -55-150 UNIT V V V A A W r ^W U \\'\\'\\: " 2 TO-2< r ^ Ji xif ^TT
1 Base
2 Collector
3 Emitter
?OC package ui A T t. "* B »H ^j -* V »|Jx F r^l -L\\ H *"] K f i f c i r IV G [- DIV A B C D F G H J K L Q R S U V *Jl mm IWN 15,50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 * H" J NJ Seiiii-Conductors reserves the right lo change tost conditions, parameter limits and package dimensions \\\\ithout notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going lo press. I hmever, N.I Semi-Conductors assumes no responsibility for nn> errors or omissions discovered in its use. NJ Seini-Conductors encourages customers to verily that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Darlington Power Transistor 2SB884
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL V{BR)CEO V(BR)CBO VcE(sat) VeE(sat) IGBO IEBO hFE fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product CONDITIONS lc= -30mA, RBE= °° lc= -5mA, \\t= 0 IC=-1.5A, lB=-3mA lc='-1.5A, la=-3mA VCB= -80V, !E= 0 VEB= -5V; lc= 0 lc= -1 .5A; VCE= -3V lc=-1.5A;VcE=-5V MIN -100 -110 1500 TYP. MAX -1.5 -2.0 -100 UNIT V V V V uA mA MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time RL=50n,Vccs= -50V lc= -1A; !BI= -Ia2= -2mA 0.8 2.4 1.2 u s M S M S