2SB884 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistor 2SB884
DESCRIPTION
- With TO-220C package
- DARLINGTON
- High DC durrent gain
- Low collector saturation voltage
- Complement to type 2SD1194
APPLICATIONS
- For motor drivers,printer hammer drivers,relay drivers,voltage regulator control applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -110 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -6 V IC Collector current-DC -3 A ICM Collector current-Pulse -5 A TC=25 30 PC Collector power dissipation Ta=25 1.75 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon PNP Power Transistor 2SB884 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-50mA, RBE=? -100 V V(BR)CBO Collector-base breakdown voltage I C=-5mA, IE=0 -110 V VCEsat Collector-emitter saturation voltage I C=-1.5A ,IB=-3mA -1.0 -1.5 V VBE sat Base-emitter saturation voltage I C=-1.5A ,IB=-3mA -2.0 V ICBO Collector cut-off current V CB=-80V, IE=0 -0.1 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -3.0 mA hFE DC current gain I C=-1.5A ; VCE=-3V 1500 fT Transition frequency V CE=-5V, IC=-1.5A 20 MHz Switching times ton Turn-on time 0.8 µs tstg Storage time 2.4 µs tf Turn-off time IC=-1A ; VCC=-50V IB1=-IB2=-2mA;RL=50E 1.2 µs
SavantIC Semiconductor Product Specification Silicon PNP Power Transistor 2SB884 PACKAGE OUTLINE Fig.2 Outline dimensions