2SB884 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB884
DESCRIPTION
- High DC Current Gain- : hFE = 1500(Min)@ IC= -1.5A
- Wide Area of Safe Operation
- Low Collector-Emitter Saturation Voltage- : V CE(sat) = -1.5V(Max)@ IC= -1.5A
- Complement to Type 2SD1194
APPLICATIONS
- Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -5 A Collector Power Dissipation TC=25℃ 30 PC Collector Power Dissipation Ta=25℃ 1.75 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB884
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA, RBE= ∞ -100 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA, IE= 0 -110 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A, IB= -3mA B -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A, IB= -3mA B -2.0 V ICBO Collector Cutoff Current VCB= -80V, IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -3 mA hFE DC Current Gain IC= -1.5A; VCE= -3V 1500 fT Current-Gain—Bandwidth Product IC= -1.5A; VCE= -5V 20 MHz Switching times ton Turn-on Time 0.8 μs tstg Storage Time 2.4 μs tf Fall Time RL= 50Ω, VCC≈ -50V IC= -1A; IB1= -IB2= -2mA 1.2 μs isc Website：www.iscsemi.cn