2SB884 SANYO
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Features
» High DC current gain. - High current capacity and wide ASO. - Low saturation voltage. ( ):2SB884 Absolute Maximum Ratings at Ta=25°C unit Collector-to-Base Voltage Vcso (—)110 Vv Collector-to-Emitter Voltage Vcro (—)100 Vv Emitter-to-Base Voltage VeEBo (-)6 Vv Collector Current. Ig (-)3 A Collector Current (Pulse) Icp (-)5 OA Collector Dissipation Po 1.75 Ww Te=25°C 30 Ww Junction Temperature Tj 150 °C Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Ico Vop=(—)80V, Ip =0 (—)0.1 mA Emitter Cutoff Current Igpo —- Vep=(—)5V, Ic=0 (—)3. mA DC Current Gain he Vor=(—)8V, Ig=(—)1.5A 1500 4000 C-E Saturation Voltage Verisat) I¢=(—)1.5A, Ip=(—)3mA 0.9-)15 V (~1.0) B-E Saturation Voltage Vexteat) Io=(—)1.5A,Ip=(—)3mA (-)20 V Gain Bandwidth Product fr Vor=(—)5V, Ic=(—)1.5A 20 MHz C-B Breakdown Voltage VosrcBo I¢=(—)5mA, Ip=0 (-)110 v C-E Breakdown Voltage Visryceo I¢=(—)50mA, Rgg=co (—)100 Vv Rise Time ton See specified Test Circuit. (0.8)0.7 us Storage Time tstg y (2.4)5.0 us Fall Time te W (1.2)1.2 us Specified Test Circuit Electrical Connection (For PNP, the polarity is reversed.) co PW=50us, Duty CycleS1% Package Dimensions 2010C 500Ig1 = —500Ig2=Ic=1A 5 ot (unit : mmm) a 15.1 —+}-— 14.0 =] \\ al “| 2.7 input PB t_ 2SB884 Py ———— an or m one vn es BS eg 1? Set | 4 se 7 a 1: Base
1008 Bi 2 4 3:Emitter
6 b , +] JEDEC: TO-220aB Vepr-sv Yec=50 ¥ 28D1194 oO EIAJ : SC-46 ‘ Unit (Resistance : 2, Capacitance : F) SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 10996TS (KOTO) 8-4529/D251MH/4027KI/D222KI No.1018-1/4
4 Ie = Vee , Ic = Vee
°° From top 288084 »° 2SDi194 aeeHA | as ‘oem; | TT ET] tL Ly | pee ee [300A ! _ 9-20 jj 220 = ae
2 Se ft eee
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O -- -2 -3 -4 -5 -6 -7 ~8 -9 -10 °O 1 2 3 4 5 6 7 6 9 100 Collector-to-Emitter Voltage, Vog — V Collector-to-Emitter Voltage, Vop ~ V 8 le = Vee 8 Ie = Vee <a Cece] Ro aa SECC) Bo es (TB bma ee ayy — ZY ——— ae |
2 Beem 2 Ba
oO -1 -2 -3 -4 -5 -6 -7 -8 ~9 -” 0 1 2 3 4 5 6 7 8 9 10 Collector-to-Emitter Voltage, Voz ~ V Collector-to-Emitter Voltage, Vcr - V a Ic_— Vee ‘ Ic_ = Vee 2SB884 2SD1194 HHH Vern av tt ia | | <4 Geewal «i]t I TI I 7 \\
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FE, |e Pt) ELT TT TTT TT g¢LEEP Fie ft) ¢ Li i 5 b A zt {| jy | le in STV 8 Py tt y tli TAY! | | tly tl Base-to-Emitter Voltage,Vpp — V Base-to-Emitter Voltage, Vpp — V 2 hee = Ie 2 hee — Ic 2SB884 2SD1194 es) ee or | T™ £27) s¢r-—Al 6g D7) SAI g sa ee poi |g eee | VN lew asm Bao tp NY EO Re SN) Meee a le lO eae SSE = a Coe Por wo 2 1000 . 0 3 1000 Collector Current,Ig — mA Collector Current,Ig — mA — Gellestor Currentlo = mA Collector Gurrentslo = mA . No.1018-2/4
2 Vee(sat) — Ic x Vee(sat) — Ie
| Cs [| f +—-++tt | [| 9 \\ i ae Se ee [ ee pti Ty yy £¢ Ss 4 Fg JZ 3 | 4 4-10 —_ ee oe E210 ae 3S i a i Ss —— 23 eee i BE SS [| Li rr PP Collector Current,I¢ — mA Collector Current,J¢ — mA
2 Varies) — tc 28B884 2 asta — Ie 28Di194
-10} 0 5 4 / i Tit tt 5 ett fs To E Pt tt Po 3 3-10 3310 = ao TT a 100 1000 1000 Collector Current,Io — mA ha Collector Current,Ig — mA “10 ASO 0 ASO H+ top | Ty [J TEE tor a [Pic TSS ATT +—--¢ T\\A/ < Fe ES N CT] « FARA FS oto SI ee ee We | || ater OR OS i a | WS a BE —_ EON RN oe re NCAT PRIN wy ES a SC eee én NSIS 8 SC eR gL A NN ee 3704 a § eee RE
8 REN 8g PENS
~ 0.01 [mato 100ms : single pulse | | oo)[2m8t0 100ms:single pulse ||| 3 =) 1 a 10 100 Collector-to-Emitter Voltage,Vcg — V Collector-to-Emitter Voltage,Vce — V Po — Te “| [ BSBae4/2SD1194 ee | i 1 x9) ——| 1 gd 2s) i is | 5 IN ri i |) | dE ° IN ° 20 40 60 & ‘roo 120 ) 160 Case Temperature,Tc ~ °C No.1018-3/4
MNo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. HM Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or . litigation on SANYO ELECTRIC CO. LTO, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. MW Information (including circuit diagrams and cirouit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is acourate and reliable, but no guarantees are made or implied regaring its use or any infringements of intellectual property rights or other rights of third parties, ; This catalog provides information as of January, 1996, Specifications and information herein are subject to change without notice, ee No.1018-4/4