2SB883 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
J , U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistor 2SB883
DESCRIPTION
- High DC Current Gain- : hFE = 2000(Min)@ lc= -7A
- Wide Area of Safe Operation
- Low Collector-Emitter Saturation Voltage- :VCE(sal)=-1.5V(Max)@lc=-7A
- Complement to Type 2SD1193
APPLICATIONS
- Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation TC=25"C Junction Temperature Storage Temperature Range VALUE -70 -60 -15 -20 150 -55-150 UNIT V V V A A W ;'.**;; ?rl P1 123 T| r -^Ji R- S2 h [H:l Base
2 Collector
3 Enitter
UL^ JUQil r- itu } 1;
- H i K B— "• — C-.- VV-F^-~;S ~>^A I ' " V ' - -t-R DIM A B C D E F H J K L N Q R S U mm WIN 19.60 15.50 4.70 0.90 1.90 3.40 2.90 3.20 0.595 20.0-0 1.90 10.89 4.90 3.35 1.995 5.90 Y 9.90 MAX 20,10 15,70 4.90 1.10 2.10 3.60 3.20 3.40 0.605 20.70 2.20 10.91 5.10 3.45 2,100 6.10 10.10 *- -»" G * *L *-»-0 -«-N-^ N.I Semi-Conductors reserves the right to change tost conditions, parameter limits and package dimensions \\\\ithout notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time orjjoii to press. I loucvcr. N.I Semi-Coiiduetors assumes no responsibilil) tor an> errors or omissions discovered in its use. N.I Seini-Coiidiiclors enauiraues eustomers to verily that datasheets are current before placing orders. Quality 5emi-Conductors
Silicon PNP Darlington Power Transistor 2SB883
ELECTRICAL CHARACTERISTICS
Tc=25t: unless otherwise specified SYMBOL V(BR)ceo V(BR)CBO VcE(sat) VBE(sat) ICBO IEBO hFE fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -50mA, RBE= °° lc= -5mA, le= 0 |c= -/A, IB= -14mA lc=-7A, lB=-14mA VCB= -40V, IE= 0 VEB= -5V; lc= 0 lc= -7A; VCE= -2V lc= -7A; VCE= -5V MIN -60 -70 2000 TYP. MAX -1.5 -2.0 -100 UNIT V V V V u A mA MHz