2SB882 NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistor 2SB882

DESCRIPTION

  • High DC Current Gain- : hFE = 2000(Min)@ lc= -5A
  • Wide Area of Safe Operation
  • Low Collector-Emitter Saturation Voltage- : VcE(sat) = -1 .5V(Max)@ lc= -5A
  • Complement to Type 2SD1192

APPLICATIONS

  • Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25"C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation TC=25"C Collector Power Dissipation Ta=25°C Junction Temperature Storage Temperature Range VALUE -70 -60 -10 -15 1.75 150 -55-150 UNIT V V V A A W IT ' 2 Z Tfl TvV— H: 1 -220C | : Base Collector Emitter package T U i A "' '"" » JL * B " -*• V *\\y -•• '"All K H ft* it c \\V A p C D F G H J K L U R S U V L D A mm WIN 15.50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13. 1.10 2.70 2.30 1.29 6.45 8.66 MAX .90 10.20 .50 0.90 3.70 5.18 2.90 0,60 r>3.40 .45 2.90 2.70 .35 6.65 8.86 — | NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to he both accurate und reliable at the time of going lo press. I hmever, NJ Semi-Conductors assumes no responsibiliu for any errors or omissions discovered in its use." N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality 5emi-Conductors

Silicon PNP Darlington Power Transistor 2SB882

ELECTRICAL CHARACTERISTICS

Tc=25t: unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VcE(sat) VeE(sat) ICBO IEBO hFE fi PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -30mA, RBE= °° lc= -5mA, IE= 0 lc=-5A, !B=-10mA lc=-5A, lB=-10mA VCB= -40V, IE= 0 VEB= -5V; lc= 0 lc= -5A; VCE= -2V lc= -5A; VCE= -5V MIN -60 -70 2000 TYP. MAX -1.5 -2.0 -100 UNIT V V V V MA mA MHz Switching times ton 'stg tf Turn-on Time Storage Time Fall Time RL=4n,VCc« -20V lc=-5A; IB1=-IB2= -10mA 0.5 1.5 1.7 u s u s u s