2SB881 NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

Jbs.mi-Condu.ctoi LPiocwcti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistor 2SB881

DESCRIPTION

  • High DC Current Gain- : hFE = 2000(Min)@lc=-3.5A
  • Wide Area of Safe Operation
  • Low Collector-Emitter Saturation Voltage- : VcE(sat) = -1.5V(Max)@ lc= -3.5A
  • Complement to Type 2SD1191

APPLICATIONS

  • Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. ABSOLUTE MAXIMUM RATINGS (Ta=25°C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation TC=25"C Collector Power Dissipation Ta=25'C Junction Temperature Storage Temperature Range VALUE -70 -60 -10 1.75 150 -55-150 UNIT V V V A A W " ~ TO R- ^~[^ H: 1 Base

2 Collector

3 Emitter

-220C package . 1 Mo A rjL ... B f ~* v H J-crt H r~\\ K c~1 A i * !'f DIN A B C D F G H J K L Q R S u V ^••" L D mm MEN 15.50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13. 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10,20 4.50 0.90 3,70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1,35 G.65 8.86

  • h j t •*"-- N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time of coin lo press. I Itmever. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Ci.ndiioiors encuuiaues customers lo verify that datasheets are current before placing orders. Quality Semi-Conductors

Silicon PNP Darlington Power Transistor 2SB881

ELECTRICAL CHARACTERISTICS

TC=251C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VcE(sat) VsE(sat) ICBO IEBO HFE fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -30mA, RBE= °° lc= -5mA, IE= 0 lc= -3.5A, IB= -7mA lc= -3.5A, IB= -7mA VCB= -40V, IE= 0 VEB=-5V; lc=0 lc= -3.5A; VCE= -2V lc= -3.5A; VCE= -5V MIN -60 -70 2000 TYP. MAX -1.5 -2.0 -100 UNIT V V V V uA mA MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time RL= 6.7Q , VCc^ -20V lc= -3A; IB1= -\\BI= -6mA 0.5 1.5 1.4 u S M S M S