2SB880 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistor 2SB880
DESCRIPTION
- High DC Current Gain- : hFE = 2000(Min)@lc=-2A
- Wide Area of Safe Operation
- Low Collector-Emitter Saturation Voltage- :VCE(Sat) = -1.5V(Max)@lc=-2A
- Complement to Type 2SD1190
APPLICATIONS
- Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. ABSOLUTE MAXIMUM RATINGS (Ta=25°C) SYMBOL VOBO VCEO VEBO Ic I CM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation TC=25'C Collector Power Dissipation Ta=25"C Junction Temperature Storage Temperature Range VALUE -70 -60 1.75 150 -55-150 UNIT V V V A A W r i • » i - ^ TG -k' / w
- - «T7 M: 1 Base
2 Collector
3 Emitter
-220C package Mo A f *
4 B •«•
J^rt .-•• * H " S ~\\ T -» • »• 1 * *^Q f^ a C \\ i DIM A B C D F G H J K L Q R S U V ,-"""' L D . H
- IF mm WIN 15.50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13. 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 — I » h1 J {)*- N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \\\\ithout notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable- at the time of going in press. I louevcr, N.I Scmi-C'ondiietors assumes no responsibility for any errors or omi.ssions discovered in its use. N.I Semi-t'onduelors encoui'a.ues customers to \\eril\\t datasheets ;ire current before placing orders. Quality 5emi-Conductors
Silicon PNP Darlington Power Transistor 2SB880
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VcE(sat) VeE(sat) ICBO IEBO hFE fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -30mA, RBE= °° lc= -5mA, IE= 0 lc= -2A, IB= -4mA |c= _2A, IB= -4mA VCB= -40V, IE- 0 VEB= -5V; lc= 0 lc= -2A; VCE= -2V lc= -2A; VCE= -5V MIN -60 -70 2000 TYP. MAX -1.5 -2.0 -100 UNIT V V V V uA mA MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time RL-IOfl.Vcc^ -20V lc= -2A; IB1= -\\B2= -4mA 0.5 1.4 1.2 M s u s u s