2SB880 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB880
DESCRIPTION
- High DC Current Gain- : hFE = 2000(Min)@ IC= -2A
- Wide Area of Safe Operation
- Low Collector-Emitter Saturation Voltage- : V CE(sat) = -1.5V(Max)@ IC= -2A
- Complement to Type 2SD1190
APPLICATIONS
- Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -6 A Collector Power Dissipation TC=25℃ 30 PC Collector Power Dissipation Ta=25℃ 1.75 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB880
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA, RBE= ∞ -60 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA, IE= 0 -70 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A, IB= -4mA B -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A, IB= -4mA B -2.0 V ICBO Collector Cutoff Current VCB= -40V, IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -3 mA hFE DC Current Gain IC= -2A; VCE= -2V 2000 fT Current-Gain—Bandwidth Product IC= -2A; VCE= -5V 20 MHz Switching times ton Turn-on Time 0.5 μs tstg Storage Time 1.4 μs tf Fall Time RL= 10Ω, VCC≈ -20V IC= -2A; IB1= -IB2= -4mA 1.2 μs isc Website：www.iscsemi.cn