2SB880 SANYO

Document overview

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Technical content

No.9248 2SB880/2SD1190. SANYO Silicon PNP/NPN Epitaxial Planar Type / Darlington. Transistor | For VaRIoUs DRIVERS a

Applications

+ Motor drivers, printer hammer drivers, relay drivers, voltage regulators Features . + High DC current gain + Large current capacity and wide ASO * Low saturation voltage ( ): 288880 . Absolute Maximum Ratings/T=25°C unit Collect-to-Base Voltage VcBo (-)70 Vv Collector-to-Emitter Voltage VCEO {-)60 Vv Emitter-to-Base Voltage VEBO (-)6 Vv Collector Current Ic (4 A Peak Collector Current lop (16 A Collector Dissipation Pc 1.75 w . Te=25°C 30 w Junction Temperature Tj 150 °c Storage Temperature Tstg —55 to +150 °c Electrical Characteristics/T g=25°C min typ) max — unit Collector Cut-off Current IcBo VeB=(—-)40, le=0 (-)0.1 mA Emitter Cut-off Current lEBO VeB=(-)5V, Ic=0 ({-)3.0 mA DC Current Gain hE Vce=(-)2V, IC=(-)2A 2000 5000 Gain Band-width Product fT VceE=(-I5V, Io=(-)2A 20 MHz Collector to Emitter Saturation VCE (sat) Ic=(-)2A, IB=(-)4mA 0.9 (-)1.5 Vv . Voltage (1.0) Base to Emitter Saturation Voltage VBE(sat) Ic=(-)2A, Ip=(-)4mA {-)2.0 Vv Collector to Base Breakdown ViBR)CBO !c=(—)5mA, IE=0 {~)70 Vv Voltage Collector to Emitter Breakdown V(BR)CEO Ic={—)50mA, RgE=o° (-)60 Vv Voltage Turn-on Time ton At Specified Test Circuit (0.5)0.6 us Storage Time tstg " (1.4)2.7 us Fall Time tf " (1.2)1.6 bs Specified Test Circuit Electrical C . (For PNP, the polarity is reversed.) ~"°*!ea! Connection oc Package Dimensions 2010B PH=50/26,Duty Cycles 1% f P 5001p ;=—S00Ig2=1¢= 2A kp (unit: mm) IR. 16.0 aL °9 Ch _—— aa Pp hf ae 12" Br Emitter [ze af fetes Collector 100; hr anOp ft > ‘B: Base YeErsv Vecs"20v 2801190 of a eee Unit (resistance:®, capacitance:F) SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN D251MH/4027K1/2083KI,TS Ne924-1/4

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D1190 E(sat) ~ Ic Be e500 B880/2S Sse 107 1B 2s =| SS Pulse 8 ‘Fea Pon

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INo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. W Anyone purchasing any products described or contained herein for an above-mentioned use shall: @® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD,, its affiliates, subsidiaries and distributors or any of their officers and employees. jointly or severally. M@ Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. : . No924-4/4