2SB880 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB880
DESCRIPTION
- With TO-220C package
- DARLNGTON
- High DC current gain
- Low collector saturation voltage
- Complement to type 2SD1190
APPLICATIONS
- Motor drivers,printer hammer drivers,relay drivers,voltage regulators PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -70 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -4 A ICM Collector current-peak -6 A TC=25 30 PC Collector power dissipation Ta=25 1.75 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB880 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-50mA, RBE=> -60 V V(BR)CBO Collector-base breakdown voltage I C=-5mA ,IE=0 -70 V VCEsat Collector-emitter saturation voltage I C=-2A ,IB=-4mA -1.0 -1.5 V VBEsat Base-emitter saturation voltage I C=-2A ,IB=-4mA -2.0 V ICBO Collector cut-off current V CB=-40V, IE=0 -0.1 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -3.0 mA fT Transition frequency I C=-2A ; VCE=-5V 20 MHz hFE DC current gain I C=-2A ; VCE=-2V 2000 5000 Switching times ton Turn-on time 0.5 µs tstg Storage time 1.4 µs tf Fall time IC=-2A ;IB1=-IB2=-4mA VCC=-20V,RL=10D 1.2 µs
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB880 PACKAGE OUTLINE Fig.2 Outline dimensions