2SB871 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
*jEii£U J^zmi-(,onauctoi Lp10ducts, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB871
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= -20V(Min)
- High Speed Switching
- Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max)@lc= -10A
APPLICATIONS
- Designed for low voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -40 -20 -10 -20 150 -55-150 UNIT V V V A A W iff PIH: 1 Base
- Z Collector ^ ' 3 Knitter - ~ TO-220C package U i A » I_ - B «H -* v H , -i j-eft
- :-:• * H ~l — \\ C r IV* J DIIV A B r D F G H J K L Q R S U tf ^-. mm MEN 15,50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0,60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 — t "•r* J N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \\\\ithout notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time ol'izoii \\.l Semi-C'oiidiictors encourages customers to \\erify that datasheets are current before placing orders. Quality 5emi-Conductors
Silicon PNP Power Transistor 2SB871
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VeE(sat) ICBO IEBO hpE-1 hpE-2 COB fi PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Collector Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -10mA; IB= 0 lc=-10A; IB=-0.33A lc=-10A; IB=-0.33A VCB= -40V; IE= 0 VEB= -5V; lc= 0 IC=-0.1A;VCE=-2V lc= -3A; VCE= -2V lE=0;Vce=-10V;f=1MHz lc=-0.5A;VCE=-10V MIN -20 TYP. 400 100 MAX -0.6 -1.5 -50 -50 260 UNIT V V V MA U A pF MHz Switching Times ton ts tf Turn-On Time Storage Time Fall Time lc=-3A; IB1=-IB2=-0.1A 0.1 0.5 0.1 u s M s u s E 2 Classifications R 60-120 Q 90-180 P 130-260