2SB871 SAVANTIC
Document overview
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- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB871 2SB871A
DESCRIPTION
- With TO-220C package
- High speed switching
- Low collector saturation voltage
APPLICATIONS
- For low voltage switching applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SB871 -40 VCBO Collector-base voltage 2SB871A Open emitter -50 V 2SB871 -20 VCEO Collector-emitter voltage 2SB871A Open base -40 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A ICM Collector current-Peak -20 A PC Collector power dissipation T C=25 40 W Tj Junction temperature 150 Tstg Storage temperature -50~150 Fig.1 simplified outline (TO-220) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB871 2SB871A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SB871 -20 V(BR)CEO Collector-emitter breakdown voltage 2SB871A IC=-10mA; IB=0 -40 V VCEsat Collector-emitter saturation voltage I C=-10A; IB=-0.33A -0.6 V VBEsat Base-emitter saturation voltage I C=-10A; IB=-0.33A -1.5 V 2SB871 V CB=-40V; IE=0 ICBO Collector cut-off current 2SB871A V CB=-50V; IE=0 -50 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -50 µA hFE-1 DC current gain I C=-0.1A ; VCE=-2V 45 hFE-2 DC current gain I C=-3A ; VCE=-2V 60 260 COB Output capacitance I E=0 ; VCB=-10V; f=1MHz 400 pF fT Transition frequency I C=-0.5A ; VCE=-10V 100 MHz Switching times ton Turn-on time 0.1 µs tstg Storage time 0.5 µs tf Fall time IC=-3A ; IB1=-IB2=-0.1A 0.1 µs hFE-2 Classifications R Q P 60-120 90-180 130-260
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB871 2SB871A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)