2SB870 JMNIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
JMnic Product Specification Silicon PNP Power Transistors 2SB870 DESCRIPTION ·
- With TO-220C package
- Complement to type 2SD866
- Low collector saturation voltage
- High collector current capability
APPLICATIONS
- For power switching applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -130 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -7 V IC Collector current (DC) -7 A ICM Collector current-Peak -15 A PC Collector dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ Fig.1 simplified outline (TO-220) and symbol
JMnic Product Specification Silicon PNP Power Transistors 2SB870 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-10mA; IB=0 -80 V VCEsat Collector-emitter saturation voltage I C=-5A; IB=-0.25A -0.5 V VBEsat Base-emitter saturation voltage I C=-5A; IB=-0.25A -1.5 V ICBO Collector cut-off current V CB=-100V; IE=0 -10 μA IEBO Emitter cut-off current V EB=-5V; IC=0 -50 μA hFE-1 DC current gain I C=-0.1A ; VCE=-2V 45 hFE-2 DC current gain I C=-3A ; VCE=-2V 60 260 fT Transition frequency I C=-0.5A ; VCE=-10V 30 MHz Switching times ton Turn-on time 0.1 μs tstg Storage time 0.8 μs tf Fall time IC=-3A ; IB1=-IB2=-0.3A 0.1 μs hFE-2 Classifications R Q P 60-120 90-180 130-260
JMnic Product Specification Silicon PNP Power Transistors 2SB870 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)