2SB870 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
^zmi-Conauekoi Lprodueti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB870
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -SOV(Min)
- Good Linearity of hFE
- Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@lc= -5A
APPLICATIONS
- Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Tc=25"C Junction Temperature Storage Temperature Range VALUE -130 -80 -15 150 -55-150 UNIT V V V A A W - ,-„ 2 * ^ PIH: 1 Base > 2 Collector _ : 3 Emitter ^ 2 TO-220C package U 1 A*-' T f « B » "" v ""L j-eft K f C hV~ r IT^D G *- , i DIM A B C D F G H J K L Q R S U V mm WIN 15,50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10,20 4,50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1,35 6.65 8.86 r — , h ^ 1 ^ ™ J N.I Semi-1'oiuliictors reserves the right to change tost conditions, parameter limits and package dimensions nithout notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at Hie time of goin to press. I kmever, N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conduclors encoura.ucs customers to verily that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SB870
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VeE(sat) ICBO IEBO hpE-1 hpE-2 fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lG=-10mA; IB= 0 lc= -5A; IB= -0.25A lc= -5A; IB= -0.25A VCB=-100V; IE=0 VEB- -5V; lc= 0 IG= -0.1 A; VCE= -2V lc= -3A; VCE= -2V lc=-0.5A;VCE=-10V MIN -80 TYP. MAX -0.5 -1.5 -10 -50 260 UNIT V V V MA MA MHz Switching Times ton ts tf Turn-On Time Storage Time Fall Time lc= -3A; IB1= -\\B2= -0.3A 0.1 0.8 0.1 |J S u s M s
- hpE-2 Classifications R 60-120 Q 90-180 P 130-260