2SB855 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB855
DESCRIPTION
- Collector Current: lc= -2A
- Low Collector Saturation Voltage :VCE(satr~1.2V(Max)@lc=-2A
- High Collector Power Dissipation
APPLICATIONS
- Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VGBO VCEO VEBO Ic PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Total Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -50 -50 150 -45-150 UNIT V V V A W . ^ 2 PIH: 1 Base 1 2 Collector ^ '• 3 Emitter 2 3 TO-Z20C package A T t * B P.
- * V H ^yi -:• H ' ' \\ T H T C J DilV A B C D F G H J K L R S U V mm MIN 15.50 9.90 4.20 0.70 3.40 4.98 2 68 0.44 13. 1.10 2.70 Z.30 1.29 6.45 8.66 MAX 15.90 10.20 450 0.90 3.70 5.18 2.90 0,60 13.40 1.45 2.90 2.70 1,35 6.65 8.86
- -S »[* j N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions uithout notice. Information furnished hy N,l Semi-Condiielors is believed to be both accurate and reliable at the time of uoiii to press. I Kmever. N.I Senii-C'ondiietors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encouraiies customers In verify thai datasheets are current before placing orders. Quality -Semi-Conductors
Silicon PNP Power Transistor 2SB855
ELECTRICAL CHARACTERISTICS
Tc=25t: unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VBE(on) ICBO hpE-1 flFE-2 fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS lc= -30mA ; RBE= °° lc= -5mA ; IE= 0 IE= -5mA; lc= 0 lc= -2A; IB= -0.2A lc= -1A; VCE= -4V VCB= -20V; IE= 0 lc= -1A; VCE= -4V lc=-0.1A;VcE=-4V lc= -0.5A; Vce= -4V MIN -50 -50 TYP. MAX -1.2 -1.5 -100 200 UNIT V V V V V uA MHz
- h.FE-1 Classifications A 35-70 B 60-120 C 100-200