2SB855 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB855
DESCRIPTION
- With TO-220C package
- Low collector saturation voltage
APPLICATIONS
- Low frequency power amplifier PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -4 V IC Collector current -2 A PC Collector power dissipation T C=25 20 W Tj Junction temperature 150 Tstg Storage temperature -45~150
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB855 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-50mA; RBE=6 -50 V V(BR)CBO Collector-base breakdown voltage I C=-5mA; IE=0 -50 V V(BR)EBO Emitter-base breakdown votage I E=-5mA; IC=0 -4 V VCEsat Collector-emitter saturation voltage I C=-2 A;IB=-0.2 A -1.2 V VBE Base-emitter voltage I C=-1A ; VCE=-4V -1.5 V ICBO Collector cut-off current V CB=-20V; IE=0 -100 µA hFE-1 DC current gain I C=-1A ; VCE=-4V 35 200 hFE-2 DC current gain I C=-0.1A ; VCE=-4V 35 fT Transition frequency I C=-0.5A ; VCE=-4V 35 MHz hFE-1 classifications A B C 35-70 60-120 100-200
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB855 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)