2SB855 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB855
DESCRIPTION
- Collector Current: IC= -2A
- Low Collector Saturation Voltage : V CE(sat)= -1.2V(Max)@IC= -2A
- High Collector Power Dissipation
APPLICATIONS
- Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -2 A PC Total Power Dissipation @ TC=25℃ 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB855
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; RBE= ∞ -50 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA ; IE= 0 -50 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -4 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -1.2 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V -1.5 V ICBO Collector Cutoff Current VCB= -20V; IE= 0 -100 μA hFE-1 DC Current Gain IC= -1A; VCE= -4V 35 200 hFE-2 DC Current Gain IC= -0.1A; VCE= -4V 35 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -4V 35 MHz hFE-1 Classifications A B C 35-70 60-120 100-200 isc Website：www.iscsemi.cn 2